Department of Computer Science and Electrical Engineering
The physics of the fundamental semiconductor processing for oxidation and diffusion as well as redistribution of boron during oxidation have been performed. The description of these processes are accompanied with their partial differential equations and the geometry of their structure with initial and boundary conditions.
All these VLSI processing technologies have been successfully simulated using the numerical solver PDEase2D. The results for both one-dimensional and two-dimensional diffusion processes and redistribution process have been obtained. These results have been compared and are in close agreement to the expected solution. These results are presented in the form of two-dimensional graphs, contour plots and three-dimensional surface plots.
Given the success of the solutions, this numerical partial differential solver PDEase2D is concluded to be suitable and applicable in the analysis of the semiconductor processing environment. The easily programmable descriptor file provides much flexibility to the user. The user is not required to solve the equations. Once the differential equations and their initial and boundary conditions are entered, this solver will generate a solution for the user. However, even though this solver isolates the numerical scheme to the user, the user is still required to understand all the background knowledge of the processing system. All of these functions shape this numerical solver to become a much appreciated simulation software for teaching VLSI technology.
Conference Paper:
Conference_Paper.pdf
Complete thesis:
Thesis.pdf
Additional material:
Appendix.pdf
Download Adobe Reader:
