Department of Computer Science and Electrical Engineering
Simulation and Measurement of gate-todrain, Cgd
and
gate-to substrate Capacitance, Cgb,
in MOSFETs
Chih-Chang Lin
Abstract:
In order to understanding the C-V characteristics of capacitances in
MOSFETs, a thorough understanding of the device physics is required.
In this thesis, introduction to MOS-capacitor is presented in terms of
band diagram which is very beneficial in understanding the three regions
of operation of MOSFETs, accumulation, depletion and inversion. To
explain the physical aspect of MOSFETs, Meyer’s and the charge-based models
are covered briefly in the modelling of the capacitances. Although
flaws exist, Meyer’s model is still quite accurate for predicting capacitances
in long channel devices. For this reason, Meyer’s model is used to
analyse the C-V characteristics of the long channel MOSFET. Some
aspects which effect capacitances are also mentioned and their effects
on the intrinsic capacitances analysed.
While the method of measuring the capacitance is covered in detailed,
the resulting capacitance of MOSFET in the three operating regions are
also cross checked with calculated value derived from the models. It is
found that the measured value of capacitances correlate with those calculated
very well indeed.
However, due to misinterpretation and lack of information of the device,
the results from the simulation using the two-dimensional simulation program,
MEDICI, is not conclusive. The possible error in the simulation is
described in detail with supporting semiconductor physics. Unfortunately,
no new results will be presented from these corrections in this thesis.
Complete thesis:
Thesis.pdf
Additional material:
Conference Paper: Conference.pdf
Reference materials: Reference.pdf
Measurement programs
Gate-to-Drain Cpacitance measurement: Cgd.bas
Gate-to-Substrate Cpacitance measurement: Cgb.bas
Simulation programs
MEDICI Simulation Program for both Cgd and Cgb: Simulate.inp
About the Author...
Dept of Computer Science and Electrical
Engineering / Chih-Chang Lin / lin@csee.uq.edu.au
/ last mod 15/10/99